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Darlington 2SD2017 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=20V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA IC=2A, IB=2mA VCE=12V, IE=-1A VCB=10V, f=1MHz 2SD2017 100max 10max 250min 2000min 1.5max 2.0max 20typ 65typ V V MHz pF 13.0min Equivalent circuit B C ( 4k ) E Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2017 300 250 20 6 1 35(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Driver for Solenoid, Relay and Motor and General Purpose (Ta=25C) Unit External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 A V 16.90.3 8.40.2 mA 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL () 50 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) -10 ton (s) 0.6typ tstg (s) 16.0typ tf (s) 3.0typ 2.54 3.9 BCE IC - VCE Characteristics (Typical) 0m A VCE( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C - V BE Temperature Characteristics (Typical) (V C E= 2V) 6 6 4 m 20 A 8m A 4m A 5 Collector Current I C (A) 5 Collector Current I C( A) 2mA 4 1mA 2 4 3 p) (Ca se Tem C 3 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. I C= 8A 1 IC=3A IC=1A 1 25C (Cas 2 IB = 0 .4 mA 2 1 0 0 1 2 3 4 5 6 0 0.2 0.5 1 5 10 50 100 500 1000 0 0 1 Base-Emittor Voltage V B E( V) -30C 125 e Te mp) (Case Temp ) 2 Collector-Emitter Voltage V C E( V) Base Current I B( mA) h FE - I C Characteristics (Typical) (VCE=2V) 10000 5000 DC Curr ent Gain h F E hFE - I C Temperature Characteristics (Typical) (VCE=2V) 10000 D C Cur r ent Gai n h F E 5000 j- a( C/W) j-a - t Characteristics 5 Typ 25 C 1000 500 1000 500 -3 0C Transient Thermal Resistance 0.5 1 56 125 C 1 100 50 30 0.03 100 50 30 0.03 0.5 0.3 0.1 0.5 1 56 0.1 1 5 10 50 Time t(ms) 100 500 1000 Collector Current I C( A) Collector Current I C( A) f T - IE Characteristics (Typical) (V C E= 12V) 30 20 10 Safe Operating Area (Single Pulse) 35 P c - T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm Typ Cut- off F req uency f T( MH Z) Collector Curr ent I C (A) 5 m D. s C (T 20 C= 25 C) Maximu m Power Dissi pation P C( W) 10 30 1m s W ith 1 0.5 20 In fin ite he 150x150x2 100x100x2 10 50x50x2 Without Heatsink at si 10 nk 0.1 0.05 0 -0.02 -0.05 -0.1 0.02 3 Without Heatsink Natural Cooling -0.5 -1 -5 -6 5 10 50 100 300 2 0 0 25 50 75 100 125 150 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 142 |
Price & Availability of 2SD2017 |
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